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FUJITSU SEMICONDUCTOR DATA SHEET
DS04-27502-3E
ASSP For Power Supply Applications
Bi-CMOS
Battery Backup IC
MB3790
s DESCRIPTION
The MB3790 is designed to control power supplies to SRAM, logic IC, or other circuit devices and protects them against momentary power failures by using backup batteries. In addition to its function to supply the power to these devices, it has a function to switch the source of power to the primary or secondary backup battery when the power supply voltage drops below a predetermined level. Also, it outputs a reset signal when the power supply turns on or off or when a fault occurs in the power supply. Ideally designed as a single-chip IC for power supply control, the MB3790 consumes only a minimal current and comes in a thin-type package. Therefore, it is best suited for power supply control in memory cards and similar other devices.
s FEATURES
* * * * * * Input circuit current consumption when non-loaded: 50 A [typ] Output drive current: 200 mA [max] Resistance between input and output: 0.5 ohms [typ] Input power-down detection level: 4.2 V 2.5 % On-chip power-on reset circuit Primary battery voltage-down detection levels: 2.65 V, 2.37 V
(Continued)
s PACKAGES
Plastic SOP, 16 pin Plastic SSOP*, 20 pin
(FPT-16P-M06)
(FPT-20P-M04)
* : Since the SSOP is an extremely thin package, use a partial heating method when mounting the device.
MB3790
(Continued) * On-chip secondary battery recharging function * Output current during battery backup: VBAT1: 500 A [max], VBAT2: 50 A [max] * Leakage current: 0.5 A [max]
s PIN ASSIGNMENTS
(TOP VIEW)
N.C. V BAT1 V OUT V OUT V BAT2 ALARM1 ALARM2 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 CONTROL N.C. V IN V IN V SENSE CT RESET RESET N.C. V BAT1 V OUT V OUT V BAT2 N.C. N.C. ALARM1 ALARM2 GND 1 2 3 4 5 6 7 8 9 10
(TOP VIEW)
20 19 18 17 16 15 14 13 12 11 CONTROL N.C. V IN V IN V SENSE N.C. N.C. CT RESET RESET
(FPT-16P-M06)
(FPT-20P-M04)
2
MB3790
s BLOCK DIAGRAM
V IN
R ON =0.5 V OUT 100
CONTROL 590K Reference voltage power 1.24V supply circuit
SBD 2.65V 500 V IN
+ V IN ALARM1
+
V SENSE
-
S
Q
3 A
2.37V
+ -
ALARM2
R
V OUT RESET Vth:3V V OUT RESET
240K
Vth:1.5V GND
CT
V BAT2
V BAT1
3
MB3790
s PIN DESCRIPTION
Pin number 16P 1 2 3, 4 5 20P 1 2 3, 4 5 Symbol N.C. VBATI VOUT VBAT2 I/O -- I O I/O Non connection This pin connects to the primary battery. These pins supply the output voltage. (Range of output current value IOUT 200 mA) This pin connects to the secondary battery. When the power supply voltage is greater than or equal to the detection level (i.e., VINH), the secondary battery is recharged using the constant-voltage method of charging. Non connection This is an open-collector output pin for a primary battery alarm signal. When the power supply voltage is greater than or equal to VINH, it monitors the primary battery voltage. If the power supply voltage is less than VINL, it does not monitor the primary battery voltage. If VBAT1 is less than or equal to 2.65 V, its output voltage is forced to a Low level. This is an open-collector output pin for a primary battery alarm signal. When the power supply voltage is greater than or equal to VINH, it monitors the primary battery voltage. If the power supply voltage is less than VINL, it does not monitor the primary battery voltage. If VBAT1 is less than or equal to 2.37 V, its output voltage is forced to a Low level. This pin connects to the ground (0 V). This pin outputs a reset signal. When the power supply voltage is less than or equal to VINL, it outputs a High level. If the power supply voltage of SRAM is less than the designated range, it directly controls the CE or CS of SRAM to disable writes and thereby protect the data in memory. This pin outputs an inverted signal of RESET. This pin is used to set the reset pulse width. Insert a capacitor between this pin and GND to set the pulse width. Non connection This pin accepts comparator input for detecting the power supply voltage level. For details, refer to APPLICATION in this data sheet. These pins accept the input voltage for the device. Non connection This pin is used for output control. For details, refer to APPLICATION in this data sheet. Name and function
-- 6
6, 7 8
N.C. ALARM1
-- O
7
9
ALARM2
O
8 9
10 11
GND RESET
-- O
10 11 -- 12 13, 14 15 16
12 13 14, 15 16 17, 18 19 20
RESET CT N.C. VSENSE VIN N.C. CONTROL
O -- -- I I -- I
4
MB3790
s FUNCTIONAL DESCRIPTION
1. Battery Backup Function
* When the power supply voltage exceeds the voltage detection level (i.e., VINH), the device outputs a current of up to 200 mA from the VIN power supply to the load circuit via the VOUT pin. * When the power supply voltage is less than or equal to VINL, the device switches the source of power for VOUT from VIN to the primary or secondary battery for backup purposes.
2. Power Supply Voltage Level Detect Function
When the power supply voltage drops below VINL, the voltage level detection comparator is actuated to perform the following (note that the detection voltage level has the hysteresis characteristics listed in ELECTRICAL CHARACTERISTICS in this data sheet): * The comparator first outputs the RESET signal (High level). * It switches the source of power for the load circuit to the primary or secondary battery. The power supply voltage detection level can be adjusted by fitting an external resistor to the VSENSE pin. When adjusting the detection level, be sure to set it to 4.0 V or higher by considering the power supply voltage for the internal circuit operation. In addition, the detection set time can be extended by connecting a capacitator. For this method of adjustment, refer to APPLICATION in this data sheet.
3. Reference Voltage Circuit
This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimmingadjusted exact reference voltage. The reference voltage power supply is used to set the reference voltage/constant current values of the detection circuit, as well as the secondary battery recharging voltage.
4. Power-on Reset Function
By charging the capacitator connected to the CT pin with constant current (approx. 3 A), this function determines the reset pulse width. The calculation formula for this is given below: Reset pulse width tPO (sec) CT (F) x 106 (When CT = 1000 pF, tPO 1 ms [typ])
5. Primary Battery Voltage Detection Function
If the primary battery voltage drops below the detection level when the power supply voltage is greater than or equal to VINL, the device outputs an alarm signal (Low level) from the CMOS output pin, ALARM1 or ALARM2. Note that the voltage level detection comparator has the hysteresis characteristics listed in ELECTRICAL CHARACTERISTICS in this data sheet. * When the primary battery voltage is 2.65 V [typ] or less: The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it's time to replace the primary battery. * When the primary battery voltage is 2.37 V [typ] or less: The ALARM2 output pin is forced to a low level to issue an alarm indicating that the primary battery voltage is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)
6. Secondary Battery Recharging Function
When the power supply voltage is greater than or equal to VINL, the device recharges the secondary battery using the constant-voltage method of charging. Note that the typical value of the device's internal recharging resistor is 500 ohms. 5
MB3790
s DESCRIPTION OF OPERATION
1. Operation When the Input Voltage Goes On or Off
V IN DV IN V INH V INL
(1) V OUT
(2)
(3)
(4)
(2)
(3)
(4) V IN-DV1 V BAT1-DVB1
t PO RESET
t PO V IN-DV1 V BAT1-DVB1
High level RESET
Low level
High level
Low level
High level V IN-DV1
Low level
High level
Low level
High level
Low level
(1) Power-on While the power supply voltage is less than VINH (4.3 V typ), the protected devices such as SRAM or a microprocessor are in the standby mode with the power supplied by the battery. When the power supply voltage rises to a level greater than or equal to VINH, the PMOS transistor between the input/ output pins turns on and the power for such devices is supplied from the VIN pin. At the same time, the primary battery voltage detection and the secondary battery recharging operations are actuated. (2) Standby mode When the power supply voltage rises to a level greater than or equal to VINH, the RESET pin outputs a High level for the set duration of time and the devices such as SRAM or a microprocessor are held in the standby mode. Note that the set duration of time can be adjusted by changing the capacitance of the CT pin. The RESET pin outputs an inverted signal of the RESET pin. (3) Active mode The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.
6
MB3790
(4) Momentary power failure or voltage dip When the power supply voltage drops less than or equal to VINL. (4.2 V typ) as the power supply goes down or its voltage dips momentarily, the RESET pin outputs a High level and the RESET pin outputs a low level. The devices such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped. Note: To guarantee backup operation in case of momentary power failure, make sure the 5 V-to-0 V fall time on VIN is 50 s or more by using, for example, a capacitator.
2. Alarm Operation
DV BAT2 V BAT1
DV BAT1
V BATH1 V BATL1 V BATH2 V BATL2
ALARM1
(1)
(1)
ALARM2
(2)
(2)
If the primary battery voltage decreases while the power supply voltage (VIN) is greater than or equal to VINH (4.3 V typ), alarm signals are output as described below. At this time, if the VBAT1 pin is released open, the output from the alarm pin becomes indeterminate. (1) Primary battery replacement alarm (alarm-1 output) If the primary battery voltage drops to VBAT1 (2.65 V typ), the ALARM1 pin is forced to a Low level to issue an alarm indicating that it's time to replace the primary battery. (2) Primary battery minimum voltage alarm (alarm-2 output) If the primary battery voltage further drops to VBAT2 (2.37 V typ), the ALARM2 pin is forced to a Low level to issue an alarm indicating that the primary battery power has dropped below the voltage necessary to retain the SRAM data (approx. 2.0 V).
7
MB3790
s ABSOLUTE MAXIMUM RATINGS
(Ta = +25C) Parameter Input voltage Battery voltage Reset output Voltage Alarm output Voltage Output current Output high current Output low current Power dissipation Storage temperature Symbol VIN VBAT VRESET VALARM IOUT IOH IOL PD Tstg Source current Sink current Ta +25C -- SSOP SOP -- Conditions Rating -0.3 to 6 -0.3 to 6 - 0.3 to VOUT + 0.3 ( 6) - 0.3 to VIN + 0.3 ( 6) 250 6 6 450* 540* -55 to +125 Unit V V V V mA mA mA mW mW C
* : When mounted on a 4 cm-square double-side epoxy board. WARNING: Permanent device damage may occur if the above ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
s RECOMMENDED OPERATING CONDITIONS
Parameter Input voltage Battery voltage Output current Output current during battery backup Operating temperature Symbol VIN VBAT IOUT IO(BAT1) IO(BAT2) Top Supply from the primary battery Supply from the secondary battery -- -- Conditions Value Min. -- -- 0 -- -- -30 Typ. 5.0 3.0 -- -- -- -- Max. 5.5 3.3 200 500 A 50 +70 C Unit V V mA
8
MB3790
s ELECTRICAL CHARACTERISTICS
* DC characteristics (Recommended operating conditions unless otherwise noted.) (VIN = +5 V, Ta = +25C) Parameter All sections Backup Power Supply Section Input current Input/output voltage difference Output delay time Symbol IIN1 DV1 DV2 tro VINL Input low voltage detection VINH Input low voltage hysteresis DVIN width Power Supply Monitoring Section Reset output voltage VOHR VOLR Conditions IOUT = 0 mA IOUT = 1 mA IOUT = 200 mA CO = 0.01 F, CT = 0 VIN Ta = - 30C to + 70C VIN Ta = - 30C to + 70C VINH - VINL IOHR = 1 mA IOLR = 5 mA IOHR = 0.2 mA IOLR = 3 mA CT = 1000 pF CT = 1000 pF CL = 100 pF VIN slew rate < 0.1 V/s Value Min. -- -- -- -- 4.10 4.05 4.20 4.15 50 4.5 -- 2.2 -- 0.5 5.0 -- -- -- Typ. 50 0.5 100 2.0 4.20 4.20 4.30 4.30 100 4.8 0.2 2.6 0.2 1.0 -- 2.0 0.2 2.0 Max. 100 10 300 10 4.30 4.35 4.40 4.45 150 -- 0.4 -- 0.4 2.0 -- 3.0 1.0 10 Unit A mV mV s V V V V mV V V V V ms s s s s
Reset output voltage VOHR during backup V IN = 0 V VBAT1 = 3 V VOLR Reset pulse width Input pulse width Reset output rise time Reset output fall time Reset output delay time tPO tPI trR tfR tpdR
(Continued)
9
MB3790
(Continued)
(VIN = +5 V, Ta = +25C) Parameter Symbol VBAT Ta = - 30C to +70C VBATH1 Low voltage detection-1 hysteresis width VBAT Ta = - 30C to +70C DVBAT1 VBATH1 - VBATL1 VBAT Ta = - 30C to +70C VBATH2 Battery-1 Monitoring Section Low voltage detection-2 hysteresis width Low voltage detection difference Battery-1 input current Battery-1 output voltage difference during backup, CTL = GND Alarm output voltage Alarm output rise time Alarm output fall time Alarm output delay time Battery-2 recharging voltage Battery-2 Monitoring Section Battery-2 output voltage difference during backup VBAT Ta = - 30C to +70C DVBAT2 DVBAT IBATA IBATB DVB1 VOHA VOLA trA tfA tpdA VCHG VBATH2 - VBATL2 VBATL1 - VBATL2 VBAT = 3 V, VIN = 0 V VBAT = 3 V, VIN = 5 V IBAT1 = 100 A IBAT1 = 10 A IOHA = 4 mA IOLA = 5 mA CL = 100 pF 50 mV overdrive ICHG = -10 A VCHG = 2.0 V IBAT2 = 10 A Conditions Value Min. 2.55 2.52 2.59 2.56 20 2.27 2.24 2.31 2.28 20 0.26 -100 -100 -- -- 4.5 -- -- -- -- 2.80 1.0 -- Typ. 2.65 2.65 2.69 2.69 40 2.37 2.37 2.41 2.41 40 0.28 -- -- 0.30 0.10 4.8 0.2 2.0 0.2 2.0 3.00 2.0 0.10 Max. 2.75 2.78 2.79 2.82 60 2.47 2.50 2.51 2.54 60 0.30 500 500 0.35 0.15 -- 0.4 3.0 1.0 10 3.20 -- 0.15 Unit V V V V mV V V V V mV V nA nA V V V V s s s V mA V
VBATL1 Low voltage detection 1
VBATL2 Low voltage detection 2
Battery-2 recharging current ICHG DVB2
10
MB3790
s TIMING CHART
1. Rise/Fall Times on Reset and Alarm Pins: tr/tf
RESET RESET ALARM1 ALARM2 10%
90%
90%
10%
tr
tf
2. Reset Pulse Width: tPO; Input Pulse Width: tPI; Reset Output Delay Time: tpdR
t PI 5V V IN 4V
V INH V INL
t PO t pdR
t pdR V IH-DV1
RESET V BAT1-DVB2
11
MB3790
3. Alarm Output delay time: tpdA
50mV V BAT1 50mV V BATL1, V BATL2
t pdA ALARM1 ALARM2
4. VOUT Output Delay Time: tro
5V
V IN
98% V OUT
t ro
12
MB3790
s TYPICAL CHARACTERISTIC CURVES
1. VOH characteristics of RESET pin
3.0
2. VOL characteristics of RESET pin
0.5
Output voltage VOH (V)
2.8 2.6 2.4 2.2 2.0 0.0
Output voltage VOL (V)
V IN = OPEN V BAT1 =+3V
0.4 0.3 0.2 0.1 0 0.0
V IN =+5V V BAT1 =+3V
-0.2
-0.4
-0.6
-0.8
-1.0
1.0
2.0
3.0
4.0
5.0
Current I (mA) 3. VOH characteristics of RESET pin
5.0
Current I (mA) 4. VOL characteristics of RESET pin
0.5
Output voltage VOH (V)
4.8 4.6 4.4 4.2 4.0 0.0 V IN =+5V V BAT1 =+3V -0.4 -0.8 -1.2 -1.6 -2.0
Output voltage VOL (V)
0.4 0.3 0.2 0.1 0 0.0
V IN = OPEN V BAT1 =+3V
1.0
2.0
3.0
4.0
5.0
Current I (mA) 5. VOH characteristics of ALM pin
5.0
Current I (mA) 6. VOL characteristics of ALM pin
0.5
Output voltage VOH (V)
4.8 4.6 4.4 4.2 4.0 0.0 V IN =+5V V BAT1 =+3V -1.0 -2.0 -3.0 -4.0 -5.0
Output voltage VOL (V)
0.4 0.3 0.2 0.1 0 0.0
V IN =+5V V BAT1 =+2V
1.0
2.0
3.0
4.0
5.0
Current I (mA)
Current I (mA)
(Continued)
13
MB3790
(Continued)
7. Temperature characteristics of input current 8. Temperature characteristics of battery power detection voltage
2.9 V IN =+5V 60 2.8
70
Battery voltage V BAT (V)
50
2.7
V BATH1
Input current I IN (A)
40
2.6
V BATL1
30
2.5 V BATH2 2.4 V BATL2
20
10
2.3
0 -40 -20 0 20 40 60 80
2.2 -40 -20 0 20 40 60 80
Ambient temperature Ta (C)
Ambient temperature Ta (C)
7. Temperature characteristics of power-down detection voltage
4.6
4.5
Power-down detection voltage V IN (V)
4.4 V INH 4.3 V INL 4.2
4.1
4.0
3.9 -40 -20 0 20 40 60 80
Ambient temperature Ta (C)
14
MB3790
s APPLICATION
1. Method of Using the CONTROL Pin
It is possible to control the operation of analog switch 1 by entering a High or Low level to the CONTROL pin while being powered by the battery. The Table below shows how the analog switch operates when its operation is controlled from the CONTROL pin. When using the primary and the secondary batteries in combination as in the case of memory cards, be sure to set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current flowing from analog switch 1. * Control Conditions of CONTROL Pin Operating state Standby/active state Backup state Control conditions Input voltage (VIN) VIN > VINL VINL > VIN VINL > VIN CONTROL pin*1 High/Low High (= VOUT) Low (= GND) ON/OFF State of analog switch*2 Analog switch 1 OFF OFF ON Analog switch 2 OFF ON ON
*1: If the CONTROL pin is released open, the logic state of the CMOS circuit may become instable letting current flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input. *2: The ON-resistance of the analog switch is approximately 10 K ohms.
Analog Switch connection Diagram
V OUT
SBD
Analog Switch 1
Analog Switch 2
V BAT1
V BAT2
Connection to the primary battery
Connection to the secondary battery
15
MB3790
3. Outputting Reset Signal Forcibly
The reset signal can be output forcibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset signal is held on until the capacitator CT is charged up after the VSENSE pin is released open.
Forced Reset Method 1
V IN
V IN
47K VSENSE SW
CT CT GND
SW: Turned on (VRESET = High)
Forced Reset Method 2
V IN
V IN
47K VSENSE Control signal input pin 10K Q1 10K
CT CT GND
When the voltage enough to turn on Q1 ( approx. 1.2 V) gives to the Control signal input pin, VRESET is equal to High level.
[Reset Pulse Width Calculation Formula] Reset Pulse Width tPO (sec) = CT (F) x106 (where CT = capacitance) Example: When CT = 1000 pF, tPO = 1 ms (Typ)
16
MB3790
4. Adjusting the Supply Voltage Detection Level Set time
The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 s or more. The set time before this reset signal is output can be extended by connecting a capacitor to the VSENSE pin.
Adjusting the Supply Voltage Detection Level Set Time
V IN
V IN
5V 4V t PI VSENSE
C
GND
5. Compatibility with JEIDA Memory Card Guideline Ver. 4
The MB3790 has its ALM1 and ALM2 pin specifications matched to the BVD2 and BVD1 pin specifications of the JEIDA Memory Card Guideline Ver. 4. Therefore, the ALM1 and ALM2 pins can be connected directly to the BVD2 and BVD1 pins. * Alarm Pin Detection Voltage Levels Pin Name ALM1 ALM2 VBAT1 2.37 V Low level Low level 2.37 V < VBAT1 2.65V Low level High level 2.65 V VBAT1 High level High level Connected Pin BVD2 BVD1
VBAT1: Primary battery voltage
17
MB3790
s STANDARD DEVICE CONFIGURATION
V IN
V BAT1
*2 *1
CONTROL V IN V IN
*2
C1
V OUT V OUT V BAT2
ALARM1 ALARM1 ALARM2 Secondary battery ALARM2 Primary battery GND CT RESET RESET CT
*1
C2
L O G I C
S R A M
GND
*1 For C1 and C2, use capacitors of 0.022 F or more. *2 For VIN and VOUT, connect these two pins to the mating pins, respectively.
s ORDERING INFORMATION
Part number MB3790PF MB3790PFT Package 16 pin, Plastic SOP (FPT-16P-M06) 20 pin, Plastic SSOP (FPT-20P-M04) Remarks
18
MB3790
s PACKAGE DIMENSIONS
16-pin, Plastic SOP (FPT-16P-M06)
2.25(.089)MAX 10.15
+0.25 -0.20
.400
+.010 -.008
0.05(.002)MIN (STAND OFF)
INDEX
5.300.30 (.209.012) "B"
7.800.40 (.307.016)
6.80 -0.20 +.016 .268 -.008
+0.40
1.27(.050) TYP
0.450.10 (.018.004)
O0.13(.005)
M
0.15 -0.02 +.002 .006 -.001 Details of "A" part 0.40(.016)
+0.05
0.500.20 (.020.008)
Details of "B" part 0.15(.006) 0.20(.008)
"A" 0.10(.004) 8.89(.350)REF
0.20(.008) 0.18(.007)MAX 0.68(.027)MAX 0.18(.007)MAX 0.68(.027)MAX
C
1994 FUJITSU LIMITED F16015S-2C-4
Dimensions in mm (inches)
(Continued)
19
MB3790
(Continued)
20-pin, Plastic SSOP (CASE No.: FPT-20P-M04)
* 6.500.10
(.256.004)
1.100.10 (.043.004) 0.10(.004)
INDEX
* 4.400.10
6.400.20 (.173.004) (.252.008)
5.40(.213)NOM
"A" 0.650.12 (.0256.0047) 0.22 .009
+0.10 -0.05 +.004 -.002
0.15 -0.02 +.002 .006 -.001
+0.05
Details of "A" part 0.100.10 (STAND OFF) (.004.004)
5.85(.230)REF 0~10
0.500.20 (.020.008)
C
1994 FUJITSU LIMITED F20014S-1C-4
Dimensions in mm (inches)
Since the SSOP (FPT-20P-M04) is built in an extremely thin structure, use a partial heating method when mounting the device.
20
FUJITSU LIMITED
For further information please contact:
Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-88, Japan Tel: (044) 754-3763 Fax: (044) 754-3329 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, U.S.A. Tel: (408) 922-9000 Fax: (408) 432-9044/9045 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122 Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281-0770 Fax: (65) 281-0220
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.
F9703 (c) FUJITSU LIMITED Printed in Japan
24

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